Semiconductor device

ABSTRACT

A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from Korean Patent Application No.10-2015-0160290 filed on Nov. 16, 2015 in the Korean IntellectualProperty Office under 35 U.S.C. 119, the contents of which in theirentirety are herein incorporated by reference.

BACKGROUND

1. Technical Field

Example embodiments relate to a semiconductor device.

2. Description of the Related Art

The recent increase in the distribution of information media has led toadvancement in the functionalities of semiconductor devices. To ensurehigher competitiveness, new semiconductor products may have to meetdemands for lower cost and higher quality by way of higher integration.Semiconductor scale-down continues to achieve higher integration.

Research is under way to increase operating speed of a semiconductordevice and enhance integration density. The semiconductor device isequipped with discrete devices such as metal-oxide-semiconductor (MOS)transistors. The integration of the semiconductor device resulted ingradually decreasing distances between gates of the MOS transistors, andalso gradually narrowed contact forming regions between the gates.

SUMMARY

An object of the example embodiments is to provide a semiconductordevice capable of improving operation performance and reliability, byadjusting a size of a source/drain contact according to inter-gatespacing.

The objectives that are intended to be addressed by the exampleembodiments are not limited to those mentioned above, and otherobjectives that are not mentioned above can be clearly understood tothose skilled in the art based on the description provided below.

According to example embodiment, a semiconductor device includes asubstrate including a first region, and a second region; a first gatestructure and a second gate structure formed on the substrate of thefirst region, the first gate structure and the second gate structurebeing spaced apart by a first distance; a third gate structure and afourth gate structure formed on the substrate of the second region, thethird gate structure and the fourth gate structure being spaced apart bya second distance different from the first distance; a first interlayerinsulating film being on the substrate of the first region and includinga first lower interlayer insulating film and a first upper interlayerinsulating film on the first lower interlayer insulating film, the firstlower interlayer insulating film surrounding a portion of a sidewall ofthe first gate structure, and a portion of a sidewall of the second gatestructure; a second interlayer insulating film being on the substrate ofthe second region and including a second lower interlayer insulatingfilm and a second upper interlayer insulating film on the second lowerinterlayer insulating film, the second lower interlayer insulating filmsurrounding a portion of a sidewall of the third gate structure, and aportion of a sidewall of the fourth gate structure; a first contactformed between the first gate structure and the second gate structureand within the first interlayer insulating film, the first contacthaving a first width; and a second contact formed between the third gatestructure and the fourth gate structure and within the second interlayerinsulating film, the second contact having a second width different fromthe first width, wherein the first width is based on an upper surface ofthe first gate structure, and the second width is based on an uppersurface of the third gate structure.

In some example embodiments of the inventive concepts, the first lowerinterlayer insulating film is not interposed between the first upperinterlayer insulating film and the sidewall of the first gate structure,and between the first upper interlayer insulating film and the sidewallof the second gate structure.

In some example embodiments of the inventive concepts, the firstdistance is greater than the second distance, and the first width isgreater than the second width.

In some example embodiments of the inventive concepts, the semiconductordevice may further comprise a first liner formed between the first lowerinterlayer insulating film and the sidewall of the first gate structure,and between the first lower interlayer insulating film and an uppersurface of the substrate.

In some example embodiments of the inventive concepts, the first linerdoes not extend between the first upper interlayer insulating film andthe sidewall of the first gate structure.

In some example embodiments of the inventive concepts, a height of anuppermost portion of the first liner on the sidewall of the first gatestructure is lower than the height of the upper surface of the firstgate structure.

In some example embodiments of the inventive concepts, the semiconductordevice may further comprise a second liner formed between the secondlower interlayer insulating film and the sidewall of the third gatestructure, and between the second lower interlayer insulating film andthe upper surface of the substrate.

In some example embodiments of the inventive concepts, the first contactcontacts the first gate structure and the second gate structure, and thesecond contact contacts the third gate structure and the fourth gatestructure.

In some example embodiments of the inventive concepts, the substratefurther includes a third region. And the semiconductor device mayfurther comprise a fifth gate structure and a sixth gate structureformed on the substrate of the third region, the fifth gate structureand the sixth gate structure being spaced apart by a third distancegreater than the first distance and the second distance, and a thirdcontact between the fifth gate structure and the sixth gate structure,the third contact having a third width.

In some example embodiments of the inventive concepts, the third widthis greater than the first width and the second width.

In some example embodiments of the inventive concepts, the third widthis substantially equal to one of the first width and the second width.

In example embodiments of the inventive concepts, the first contactcontacts the first gate structure and the second gate structure, thesecond contact contacts the third gate structure and the fourth gatestructure, and the third contact does not contact at least one of thefifth gate structure and the sixth gate structure.

In some example embodiments of the inventive concepts, a thickness ofthe first upper interlayer insulating film is substantially equal to athickness of the second upper interlayer insulating film.

In some example embodiments of the inventive concepts, the first gatestructure includes a first gate electrode, and the third gate structureincludes a second gate electrode, and a sign of a slope of a sidewall ofthe first gate electrode is different from a sign of a slope of asidewall of the second gate electrode.

In some example embodiments of the inventive concepts, the first gatestructure includes a first gate electrode, and the third gate structureincludes a second gate electrode, and a sign of a slope of a sidewall ofthe first gate electrode is same as a sign of a slope of a sidewall ofthe second gate electrode.

In some example embodiments of the inventive concepts, a ratio of athickness of the first upper interlayer insulating film to a thicknessof the first interlayer insulating film is different from a ratio of athickness of the second upper interlayer insulating film to a thicknessof the second interlayer insulating film.

In some example embodiments of the inventive concepts, the semiconductordevice may further comprise a first source/drain formed between thefirst gate structure and the second gate structure, and a secondsource/drain formed between the third gate structure and the fourth gatestructure. The first contact is connected with the first source/drain,and the second contact is connected with the second source/drain.

In some example embodiments of the inventive concepts, the first gatestructure includes a gate spacer defining a trench, a gate insulatingfilm being formed along a sidewall and a bottom surface of the trench,and a gate electrode being on the gate insulating film and filling thetrench.

In some example embodiments of the inventive concepts, the semiconductordevice may further comprise a first fin-type pattern and a secondfin-type pattern protruding from the substrate. The first gate structureand the second gate structure intersect the first fin-type pattern, andthe third gate structure and the fourth gate structure intersect thesecond fin-type pattern.

According to another example embodiment, a semiconductor device includesa substrate including a first region, and a second region; a first gatestructure and a second gate structure formed on the substrate of thefirst region, the first gate structure and the second gate structurebeing spaced apart by a first distance; a third gate structure and afourth gate structure formed on the substrate of the second region, thethird gate structure and the fourth gate structure being spaced apart bya second distance greater than the first distance; a first linerextending along a portion of a sidewall of the first gate structure, anupper surface of the substrate, and a portion of a sidewall of thesecond gate structure; a second liner extending along a portion of asidewall of the third gate structure, the upper surface of thesubstrate, and a portion of a sidewall of the fourth gate structure; afirst interlayer insulating film being on the first liner andsurrounding the sidewall of the first gate structure and the sidewall ofthe second gate structure; a second interlayer insulating film being onthe second liner and surrounding the sidewall of the third gatestructure and the sidewall of the fourth gate structure; a first contactformed between the first gate structure and the second gate structureand within the first interlayer insulating film, the first contacthaving a first width; and a second contact formed between the third gatestructure and the fourth gate structure and within the second interlayerinsulating film, the second contact having a second width greater thanthe first width, wherein the first width is based on or correlated tothe width of an upper surface of the first gate structure, and thesecond width is based on or correlated to the width of an upper surfaceof the third gate structure.

In some example embodiments of the inventive concepts, the firstinterlayer insulating film includes a first lower interlayer insulatingfilm on the first liner, and a first upper interlayer insulating film onthe first lower interlayer insulating film, and the second interlayerinsulating film includes a second lower interlayer insulating film onthe second liner, and a second upper interlayer insulating film on thesecond lower interlayer insulating film.

In some example embodiments of the inventive concepts, the first lowerinterlayer insulating film is not interposed between the first upperinterlayer insulating film and the sidewall of the first gate structure,and between the first upper interlayer insulating film and the sidewallof the second gate structure, and the second lower interlayer insulatingfilm is not interposed between the second upper interlayer insulatingfilm and the sidewall of the third gate structure, and between thesecond upper interlayer insulating film and the sidewall of the fourthgate structure.

In some example embodiments of the inventive concepts, a height of anuppermost portion of the first liner on the sidewall of the first gatestructure is lower than the height of the upper surface of the firstgate structure, and a height of an uppermost portion of the second lineron the sidewall of the third gate structure is lower than the height ofthe upper surface of the third gate structure.

In some example embodiments of the inventive concepts, a distance fromthe upper surface of the first gate structure to an uppermost portion ofthe first liner is substantially equal to a distance from the uppersurface of the third gate structure to an uppermost portion of thesecond liner.

In some example embodiments of the inventive concepts, the first gatestructure includes a first gate electrode, and the third gate structureincludes a second gate electrode, and a sign of a slope of a sidewall ofthe first gate electrode is different from a sign of a slope of asidewall of the second gate electrode.

In some example embodiments of the inventive concepts, a distance fromthe upper surface of the first gate structure to an uppermost portion ofthe first liner is greater than a distance from the upper surface of thethird gate structure to an uppermost portion of the second liner.

In some example embodiments of the inventive concepts, the first gatestructure includes a first gate electrode, and the third gate structureincludes a second gate electrode, and a sign of a slope of a sidewall ofthe first gate electrode is same as a sign of a slope of a sidewall ofthe second gate electrode.

In some example embodiments of the inventive concepts, the sidewall ofthe first gate electrode and the sidewall of the second gate electrodeare orthogonal to the upper surface of the substrate.

In some example embodiments of the inventive concepts, the first contactcontacts the sidewall of the first gate structure and the sidewall ofthe second gate structure, and the second contact contacts the sidewallof the third gate structure and the sidewall of the fourth gatestructure.

In some example embodiments of the inventive concepts, a width of thefirst contact and a width of the second contact increase as a distancefrom the upper surface of the substrate increases.

In some example embodiments of the inventive concepts, a width of thefirst contact decreases and then increases, and a width of the secondcontact increases, as a distance from the upper surface of the substrateincreases.

According to still another example embodiments, a semiconductor deviceincludes a substrate including a first region, and a second region; afirst gate structure and a second gate structure formed on the substrateof the first region, the first gate structure and the second gatestructure being spaced apart by a first distance, a third gate structureand a fourth gate structure formed on the substrate of the secondregion, the third gate structure and the fourth gate structure beingspaced apart by a second distance lower than the first distance; a firstliner formed along a sidewall of the first gate structure, an uppersurface of the substrate, and a sidewall of the second gate structure,the first liner being not formed on an upper surface of the first gatestructure and an upper surface of the second gate structure; a secondliner formed along a sidewall of the third gate structure, the uppersurface of the substrate, and a sidewall of the fourth gate structure,the second liner being not formed on an upper surface of the third gatestructure and an upper surface of the fourth gate structure; a firstinterlayer insulating film being on the first liner and surrounding thesidewall of the first gate structure and the sidewall of the second gatestructure; a second interlayer insulating film being on the second linerand surrounding the sidewall of the third gate structure and thesidewall of the fourth gate structure; a first contact formed betweenthe first gate structure and the second gate structure and within thefirst interlayer insulating film, the first contact having a firstwidth; and a second contact formed between the third gate structure andthe fourth gate structure and within the second interlayer insulatingfilm, the second contact having a second width lower than the firstwidth, wherein the first width is based on or correlated to the width ofthe upper surface of the first gate structure, and the second width isbased on or correlated to the width of the upper surface of the thirdgate structure.

In some example embodiments of the inventive concepts, a height from theupper surface of the substrate to an uppermost portion of the firstliner is substantially equal to a height from the upper surface of thesubstrate to the upper surface of the first gate structure.

In some example embodiments of the inventive concepts, the firstinterlayer insulating film includes a first lower interlayer insulatingfilm, and a first upper interlayer insulating film on the first lowerinterlayer insulating film, and the first lower interlayer insulatingfilm is not interposed between the first upper interlayer insulatingfilm and the sidewall of the first gate structure, and between the firstupper interlayer insulating film and the sidewall of the second gatestructure.

In some example embodiments of the inventive concepts, the first lineris formed on a portion of the sidewall of the first gate structure, anda portion of the sidewall of the second gate structure, and a heightfrom the upper surface of the substrate to an uppermost portion of thesecond liner is substantially equal to a height from the upper surfaceof the substrate to an upper surface of the third gate structure.

In some example embodiments of the inventive concepts, a height of anuppermost portion of the first liner on the sidewall of the first gatestructure is lower than the height of the upper surface of the firstgate structure.

In some example embodiments of the inventive concepts, the secondinterlayer insulating film includes a second lower interlayer insulatingfilm, and a second upper interlayer insulating film on the second lowerinterlayer insulating film, and the second lower interlayer insulatingfilm is not interposed between the second upper interlayer insulatingfilm and the sidewall of the third gate structure, and between thesecond upper interlayer insulating film and the sidewall of the fourthgate structure.

In some example embodiments of the inventive concepts, the first contactcontacts the first gate structure and the second gate structure, and thesecond contact contacts the third gate structure and the fourth gatestructure.

In some example embodiments of the inventive concepts, the first gatestructure includes a gate spacer defining a trench, and a gateinsulating film formed along a sidewall and a bottom surface of thetrench.

According to still another example embodiments, a semiconductor deviceincludes a gate structure being on a substrate and including a firstsidewall and a second sidewall; a first source/drain being adjacent tothe first sidewall of the gate structure; a second source/drain beingadjacent to the second sidewall of the gate structure; a liner extendingalong the first sidewall of the gate structure, the second sidewall ofthe gate structure, an upper surface of the first source/drain, and anupper surface of the second source/drain; and a contact contacting thefirst sidewall of the gate structure and being connected with the firstsource/drain, wherein a height of the liner on the first sidewall of thegate structure is different from a height of the liner on the secondsidewall of the gate structure.

In some example embodiments of the inventive concepts, the height of theliner on the first sidewall of the gate structure is lower than theheight of the liner on the second sidewall of the gate structure.

In some example embodiments of the inventive concepts, the liner isformed on a portion of the first sidewall of the gate structure, and aportion of the second sidewall of the gate structure.

In some example embodiments of the inventive concepts, a contactcontacting the second sidewall of the gate structure and being connectedwith the second source/drain is not formed.

In some example embodiments of the inventive concepts, the semiconductordevice may further comprise an interlayer insulating film surroundingthe second sidewall of the gate structure, and covering an upper surfaceof the liner.

In some example embodiments of the inventive concepts, a height from anupper surface of the substrate to an uppermost portion of the liner islower than a height from the upper surface of the substrate to an uppersurface of the interlayer insulating film.

In some example embodiments of the inventive concepts, the interlayerinsulating film includes a lower interlayer insulating film on theliner, and an upper interlayer insulating film on the lower interlayerinsulating film, and the lower interlayer insulating film is notinterposed between the upper interlayer insulating film and the secondsidewall of the gate structure.

In some example embodiments of the inventive concepts, a width of thecontact increases as a distance from an upper surface of the substrateincreases.

In some example embodiments of the inventive concepts, the gatestructure includes a gate electrode, and a width of the gate electrodedecreases as the distance from the upper surface of the substrateincreases.

In some example embodiments of the inventive concepts, the gatestructure includes a gate electrode, and a width of the gate electrodeis substantially constant as the distance from the upper surface of thesubstrate increases.

In some example embodiments of the inventive concepts, a width of thecontact decreases and then increases as a distance from an upper surfaceof the substrate increases.

In some example embodiments of the inventive concepts, the gatestructure includes a gate spacer defining a trench, and a gateinsulating film formed along a sidewall and a bottom surface of thetrench.

In some example embodiments, a semiconductor device includes a substrateincluding a first region and a second region, a first gate structure anda second gate structure on the substrate at the first region, the firstgate structure and the second gate structure being spaced apart by afirst distance, a third gate structure and a fourth gate structure onthe substrate at the second region, the third gate structure and thefourth gate structure being spaced apart by a second distance differentfrom the first distance, a first contact between the first gatestructure and the second gate structure, the first contact having afirst width, and a second contact between the third gate structure andthe fourth gate structure, the second contact having a second width, thefirst width being proportional to the first distance, and the secondwidth being proportional to the second distance.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the exampleembodiments will become more apparent to those of ordinary skill in theart by describing in detail example embodiments thereof with referenceto the accompanying drawings, in which:

FIG. 1 is layout diagram provided to explain a semiconductor deviceaccording to some example embodiments;

FIG. 2 is a cross sectional view taken on lines A-A and B-B of FIG. 1;

FIG. 3 illustrates the first gate structure portion and the third gatestructure portion of FIG. 2 in enlargement;

FIGS. 4A to 4D are various examples of a cross sectional view taken online C-C of FIG. 1;

FIGS. 5A and 5B are various examples of a cross sectional view taken online D-D of FIG. 1;

FIG. 6 is a view provided to explain a semiconductor device according tosome example embodiments;

FIG. 7 is a view provided to explain a semiconductor device according tosome example embodiments;

FIG. 8 is a view provided to explain a semiconductor device according tosome example embodiments;

FIG. 9 illustrates the first gate structure portion and the third gatestructure portion of FIG. 8 in enlargement;

FIG. 10 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 11 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 12 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 13 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 14 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 15A is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 15B is an enlarged, example view of the squared area P of FIG. 15A;

FIG. 16 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 17 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 18 illustrates the first gate structure portion and the third gatestructure portion of FIG. 17 in enlargement;

FIG. 19 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 20 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 21 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 22 is a layout diagram provided to explain a semiconductor deviceaccording to some example embodiments;

FIG. 23 is a cross sectional view taken on lines A-A, B-B, and E-E ofFIG. 22;

FIG. 24 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 25 is a view provided to explain a semiconductor device accordingto some example embodiments;

FIG. 26 is a layout diagram provided to explain a semiconductor deviceaccording to some example embodiments;

FIG. 27 is a cross sectional view taken on line D-D of FIG. 26; and

FIG. 28 is a block diagram of a SoC system comprising a semiconductordevice according to example embodiments.

DETAILED DESCRIPTION

Advantages and features of the inventive concepts and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of example embodiments and theaccompanying drawings. The inventive concepts may, however, be embodiedin many different forms and should not be construed as being limited tothe embodiments set forth herein. Rather, these embodiments are providedso that this disclosure will be thorough and complete and will fullyconvey the concepts of the invention to those skilled in the art, andthe inventive concepts will only be defined by the appended claims. Inthe drawings, the thickness of layers and regions are exaggerated forclarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to,” or “coupled to” another element or layer, itcan be directly on, directly connected to or coupled to another elementor layer or intervening elements or layers may be present. In contrast,when an element is referred to as being “directly on,” “directlyconnected to” or “directly coupled to” another element or layer, thereare no intervening elements or layers present. Like numbers refer tolike elements throughout. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items. Inaddition, it will also be understood that when a layer is referred to asbeing “between” two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the inventive concepts.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. It is noted that the use of anyand all examples, or example terms provided herein is intended merely tobetter illuminate the invention and is not a limitation on the scope ofthe invention unless otherwise specified. Further, unless definedotherwise, all terms defined in generally used dictionaries may not beoverly interpreted.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. Like reference numerals referto like elements throughout. The same reference numbers indicate thesame components throughout the specification.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the example term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of exampleembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, example embodiments should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofexample embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein. As used herein, expressions such as“at least one of,” when preceding a list of elements, modify the entirelist of elements and do not modify the individual elements of the list.

When the terms “about” or “substantially” are used in this specificationin connection with a numerical value, it is intended that the associatednumerical value include a tolerance of ±10% around the stated numericalvalue. Moreover, when reference is made to percentages in thisspecification, it is intended that those percentages are based onweight, i.e., weight percentages. The expression “up to” includesamounts of zero to the expressed upper limit and all valuestherebetween. When ranges are specified, the range includes all valuestherebetween such as increments of 0.1%. Moreover, when the words“generally” and “substantially” are used in connection with geometricshapes, it is intended that precision of the geometric shape is notrequired but that latitude for the shape is within the scope of thedisclosure. Although the tubular elements of the embodiments may becylindrical, other tubular cross-sectional forms are contemplated, suchas square, rectangular, oval, triangular and others.

Although corresponding plan views and/or perspective views of somecross-sectional view(s) may not be shown, the cross-sectional view(s) ofdevice structures illustrated herein provide support for a plurality ofdevice structures that extend along two different directions as would beillustrated in a plan view, and/or in three different directions aswould be illustrated in a perspective view. The two different directionsmay or may not be orthogonal to each other. The three differentdirections may include a third direction that may be orthogonal to thetwo different directions. The plurality of device structures may beintegrated in a same electronic device. For example, when a devicestructure (e.g., a memory cell structure or a transistor structure) isillustrated in a cross-sectional view, an electronic device may includea plurality of the device structures (e.g., memory cell structures ortransistor structures), as would be illustrated by a plan view of theelectronic device. The plurality of device structures may be arranged inan array and/or in a two-dimensional pattern.

Although the drawings regarding a semiconductor device according to someexample embodiments exemplify a fin-type transistor (FinFET) comprisinga channel region in a fin-type pattern shape, example embodiments arenot limited thereto. It is of course possible that a semiconductordevice according to some example embodiments may include a tunnelingtransistor (tunneling FET), a transistor comprising nanowire, atransistor comprising nano-sheet, or a three-dimensional (3D)transistor. Further, a semiconductor device according to some exampleembodiments may include a bipolar junction transistor, a laterallydiffused metal oxide semiconductor (LDMOS) transistor, and so on.

Moreover, while a semiconductor device according to some exampleembodiments is exemplified as a multi-channel transistor using fin-typepattern, the semiconductor device may be a planar transistor as well.

Hereinbelow, a semiconductor device according to some exampleembodiments will be explained with reference to FIGS. 1 to 5B.

FIG. 1 is a layout diagram provided to explain a semiconductor deviceaccording to some example embodiments. FIG. 2 is a cross sectional viewtaken on lines A-A and B-B of FIG. 1. FIG. 3 illustrates the first gatestructure portion and the third gate structure portion of FIG. 2 inenlargement. FIGS. 4A to 4D are various examples of a cross sectionalview taken on line C-C of FIG. 1. FIGS. 5A and 5B are various examplesof a cross sectional view taken on line D-D of FIG. 1.

Referring to FIGS. 1 to 5B, the semiconductor device according to someexample embodiments may include a first fin-type pattern 110, a secondfin-type pattern 310, a first gate structure 120, a second gatestructure 220, a third gate structure 320, a fourth gate structure 420,a first contact 170, and a second contact 370.

The substrate 100 may include a first region I and a second region II.The first region I and the second region II may be the regions that arespaced apart from each other, or connected with each other. Further, thetransistor formed in the first region I and the transistor formed in thesecond region II may be of a same type, or different types from eachother.

The substrate 100 may be a bulk silicon or a silicon-on-insulator (SOI).Alternatively, the substrate 100 may be a silicon substrate, or mayinclude other substance such as, for example, silicon germanium, silicongermanium on insulator (SGOI), indium antimonide, lead telluridecompound, indium arsenide, indium phosphide, gallium arsenide, orgallium antimonide, but not limited thereto.

In the first region I, the first fin-type pattern 110, the first gatestructure 120, the second gate structure 220, and the first contact 170may be formed.

The first fin-type pattern 110 may extend longitudinally on thesubstrate 100 and in a first direction X1. The first fin-type pattern110 may protrude from the substrate 100.

The first fin-type pattern 110 may be a part of the substrate 100, andmay include an epitaxial layer grown from the substrate 100.

The first fin-type pattern 110 may include an element semiconductormaterial such as silicon or germanium, for example. Further, the firstfin-type pattern 110 may include a compound semiconductor such as, forexample, IV-IV group compound semiconductor or III-V group compoundsemiconductor.

Specifically, take the IV-IV group compound semiconductor for instance,the first fin-type pattern 110 may be a binary compound or a ternarycompound including, for example, at least two or more of carbon (C),silicon (Si), germanium (Ge), or tin (Sn), or the above-mentioned binaryor ternary compound doped with a IV group element.

Take the III-V group compound semiconductor for instance, the firstfin-type pattern 110 may be one of a binary compound, a ternary compoundor a quaternary compound which is formed by a combination of a III groupelement which may be at least one of aluminum (Al), gallium (Ga), orindium (In), with a V group element which may be one of phosphorus (P),arsenic (As) or antimony (Sb).

In the semiconductor device according to some example embodiments, it isassumed that the first fin-type pattern 110 is a silicon fin-typepattern.

The field insulating film 105 may be formed to surround a portion of thefirst fin-type pattern 110. The first fin-type pattern 110 may bedefined by the field insulating film 105. Accordingly, a portion of thefirst fin-type pattern 110 may protrude upward higher than an uppersurface of the field insulating film 105.

The field insulating film 105 may include, for example, an oxide film, anitride film, an oxynitride film, or a film combining an oxide film, anitride film, an oxynitride film.

Unlike FIG. 4A, in FIG. 4C, a first field liner 106 may be additionallyformed between the field insulating film 105 and the first fin-typepattern 110, and between the field insulating film 105 and the substrate100.

The first field liner 106 may be formed along a sidewall of the firstfin-type pattern 110 surrounded by the field insulating film 105, andalong an upper surface of the substrate 100. The first field liner 106may not protrude upward higher than an upper surface of the fieldinsulating film 105.

The first field liner 106 may include at least one of, for example,polysilicon, amorphous silicon, silicon oxynitride, silicon nitride, orsilicon oxide.

Further, unlike FIG. 4A, in FIG. 4D, a second field liner 107 and athird field liner 108 may be additionally formed between the fieldinsulating film 105 and the first fin-type pattern 110, and between thefield insulating film 105 and the substrate 100.

The second field liner 107 may be formed along the sidewall of the firstfin-type pattern 110 surrounded by the field insulating film 105, andalong the upper surface of the substrate 100.

The third field liner 108 may be formed on the second field liner 107.The third field liner 108 may be formed along the second field liner107.

The second field liner 107 may include, for example, polysilicon oramorphous silicon. The third field liner 108 may include, for example,silicon oxide.

The first gate structure 120 may extend in a second direction Y1. Thefirst gate structure 120 may be formed to intersect the first fin-typepattern 110.

The first gate structure 120 may include a first gate electrode 130, afirst gate insulating film 125, and a first gate spacer 135.

The second gate structure 220 may extend in the second direction Y1. Thesecond gate structure 220 may be formed to intersect the first fin-typepattern 110. The second gate structure 220 may be spaced apart from thefirst gate structure 120 by a first distance L1.

The second gate structure 220 may include a second gate electrode 230, asecond gate insulating film 225, and a second gate spacer 235.

The first gate spacer 135 and the second gate spacer 235 may be formedon the first fin-type pattern 110, respectively. The first gate spacer135 may define a first trench 135 t extending in the second directionY1. The second gate spacer 235 may define a second trench 235 textending in the second direction Y1.

An outer sidewall of the first gate spacer 135 may be a first sidewall120 a of the first gate structure and a second sidewall 120 b of thefirst gate structure that extend in the second direction Y1. Further, anouter sidewall of the second gate spacer 235 may be a sidewall 220 a ofthe second gate structure.

Further, depending on examples, the first gate spacer 135 and the secondgate spacer 235 may serve as the guides to form self-aligned contacts.Accordingly, the first gate spacer 135 and the second gate spacer 235may include a material having etch selectivity with respect to a firstinterlayer insulating film 180 which will be described below.

The first gate spacer 135 and the second gate spacer 235 may eachinclude at least one of, for example, silicon nitride (SiN), siliconoxynitride (SiON), silicon dioxide (SiO₂), silicon oxycarbonitride(SiOCN), and a combination thereof.

As illustrated, the first gate spacer 135 and the second gate spacer 235may each be a single film. However, this is provided only forconvenience of illustration and example embodiments are not limitedthereto.

When the first gate spacer 135 and the second gate spacer 235 are aplurality of films, at least one of the films of the first gate spacer135 and the second gate spacer 235 may include a low-k dielectricmaterial such as silicon oxycarbonitride (SiOCN).

Further, when the first gate spacer 135 and the second gate spacer 235are a plurality of films, at least one of the films of the first gatespacer 135 and the second gate spacer 235 may have a L-shape.

Further, when the first gate spacer 135 and the second gate spacer 235are a plurality of films, the first gate spacer 135 and the second gatespacer 235 may each be a combination of an L-shaped film and an I-shapedfilm.

The first gate insulating film 125 may be formed on the first fin-typepattern 110 and the field insulating film 105. The first gate insulatingfilm 125 may be formed along the sidewall and the bottom surface of thefirst trench 135 t. The first gate insulating film 125 may be formedalong a profile of the first fin-type pattern 110 protruding upwardhigher than the field insulating film 105, and along the upper surfaceof the field insulating film 105 and the inner sidewall of the firstgate spacer 135.

Further, an interfacial layer 126 may be additionally formed between thefirst gate insulating film 125 and the first fin-type pattern 110.Although not illustrated, referring to FIG. 2, an interfacial layer mayalso be additionally formed between the first gate insulating film 125and the first fin-type pattern 110.

As illustrated in FIG. 4B, the interfacial layer 126 may be formed alongthe profile of the first fin-type pattern 110 that protrudes higher thanthe upper surface of the field insulating film 105, although exampleembodiments are not limited thereto.

The interfacial layer 126 may extend along the upper surface of thefield insulating film 105 according to a method used for forming theinterfacial layer 126.

Hereinbelow, example embodiments are explained by referring to drawingsin which illustration of the interfacial layer 126 is omitted forconvenience of explanation.

The second gate insulating film 225 may be formed on the first fin-typepattern 110. The second gate insulating film 225 may be formed along thesidewall and the bottom surface of the second trench 235 t.

Description of the second gate insulating film 225 may be similar to orthe same as that of the first gate insulating film 125, and will not beredundantly described below.

The first gate insulating film 125 and the second gate insulating film225 may each include, for example, at least one of silicon oxide,silicon oxynitride, silicon nitride, or a high-k dielectric materialwith a higher dielectric constant than silicon oxide.

For example, the high-k dielectric material may include one or more ofhafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanumoxide, lanthanum aluminum oxide, zirconium oxide, zirconium siliconoxide, tantalum oxide, titanium oxide, barium strontium titanium oxide,barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminumoxide, lead scandium tantalum oxide, or lead zinc niobate.

Further, while the high-k dielectric material described above isexplained main with reference to oxides, alternatively, the high-kdielectric material may include one or more of the nitride (e.g.,hafnium nitride) or the oxynitride (e.g., hafnium oxynitride) of themetal materials described above, but not limited thereto.

The first gate electrode 130 may be formed on the first gate insulatingfilm 125. The first gate electrode 130 may fill the first trench 135 t.

The second gate electrode 230 may be formed on the second gateinsulating film 225. The second gate electrode 230 may fill the secondtrench 235 t.

As illustrated, the first gate electrode 130 and the second gateelectrode 230 may be single films. However, this is provided only forconvenience of illustration and example embodiments are not limitedthereto. That is, it is of course possible that the first gate electrode130 and the second gate electrode 230 may each include a plurality offilms such as a barrier film, a work function adjustment film, a fillingfilm, and so on.

The first gate electrode 130 and the second gate electrode 230 mayinclude at least one of, for example, titanium nitride (TiN), tantalumcarbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN),tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN),titanium aluminum nitride (TiAlN), tantlum aluminum nitride (TaAlN),tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl),titanium aluminum carbonitride (TiAlC—N), titanium aluminum carbide(TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN), tungsten(W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum(Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni—Pt), niobium (Nb),niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo),molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide(WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver(Ag), gold (Au), sinc (Zn), vanadium (V), and a combination thereof.

The first gate electrode 130 and the second gate electrode 230 may eachinclude a conductive metal oxide, a conductive metal oxynitride, and soon, and an oxidized form of the materials described above.

The first source/drain 140 may be formed between the first gatestructure 120 and the second gate structure 220. The first source/drain140 may be formed adjacent to the first sidewall 120 a of the first gatestructure.

The second source/drain 145 may be formed adjacent to the secondsidewall 120 b of the first gate structure.

As illustrated, the first source/drain 140 and the second source/drain145 may include an epitaxial layer formed within the first fin-typepattern 110, although example embodiments are not limited thereto. Thefirst source/drain 140 and the second source/drain 145 may be impurityregions formed within the first fin-type pattern 110, and may include anepitaxial layer formed along a profile of the first fin-type pattern110.

For example, the first source/drain 140 and the second source/drain 145may be raised source/drains.

As illustrated in FIGS. 5A and 5B, the first source/drain 140 may notinclude an outer circumference extending along the upper surface of thefield insulating film 105, but this is provided only for convenience ofexplanation and the example embodiments are not limited thereto. Thatis, the first source/drain 140 may include an outer circumferenceextending along the upper surface of the field insulating film 105 andbeing in surface-contact with the field insulating film 105.

When the semiconductor device in the first region I according to someexample embodiments is a PMOS transistor, the first source/drain 140 andthe second source/drain 145 may include a compressive stress material.For example, the compressive stress material may be a material such asSiGe that has a higher lattice constant compared to Si. For example, thecompressive stress material can enhance mobility of the carrier in thechannel region by exerting compressive stress on the first fin-typepattern 110.

Alternatively, when the semiconductor device in the first region Iaccording to some example embodiments is an NMOS transistor, the firstsource/drain 140 and the second source/drain 145 may include a tensilestress material. For example, when the first fin-type pattern 110 issilicon, the first source/drain 140 and the second source/drain 145 maybe a material such as SiC that has a smaller lattice constant than thesilicon. For example, the tensile stress material can enhance mobilityof the carrier in the channel region by exerting tensile stress on thefirst fin-type pattern 110.

Meanwhile, when the semiconductor device in the first region I accordingto some example embodiments is an NMOS transistor, the firstsource/drain 140 and the second source/drain 145 may include a samematerial as the first fin-type pattern 110, i.e., silicon.

In the second region II, the second fin-type pattern 310, the third gatestructure 320, the fourth gate structure 420, and the second contact 370may be formed.

The second fin-type pattern 310 may extend longitudinally on thesubstrate 100 in a third direction X2. The second fin-type pattern 310may protrude from the substrate 100.

The second fin-type pattern 310 may be a part of the substrate 100, andmay include an epitaxial layer grown from the substrate 100.

Like the first fin-type pattern 110, the second fin-type pattern 310 mayinclude a variety of semiconductor materials. However, in thesemiconductor device according to some example embodiments, it isassumed that the second fin-type pattern 310 is a silicon fin-typepattern.

The third gate structure 320 may extend in a fourth direction Y2. Thethird gate structure 320 may be formed to intersect the second fin-typepattern 310.

The third gate structure 320 may include a third gate electrode 330, athird gate insulating film 325, and a third gate spacer 335.

The fourth gate structure 420 may extend in the fourth direction Y2. Thefourth gate structure 420 may be formed to intersect the second fin-typepattern 310. The fourth gate structure 420 may be spaced apart from thethird gate structure 320 by a second distance L2.

The fourth gate structure 420 may include a fourth gate electrode 430, afourth gate insulating film 425, and a fourth gate spacer 435.

The third gate spacer 335 and the fourth gate spacer 435 may be formedon the second fin-type pattern 310, respectively. The third gate spacer335 may define a third trench 335 t extending in the fourth directionY2. The fourth gate spacer 435 may define a fourth trench 435 textending in the fourth direction Y2.

An outer sidewall of the third gate spacer 335 may be a first sidewall320 a of the third gate structure and a second sidewall 320 b of thethird gate structure that extend in the fourth direction Y2. Further, anouter sidewall of the fourth gate spacer 435 may be a sidewall 420 a ofthe fourth gate structure.

Description about the third gate spacer 335 and the fourth gate spacer435 may be substantially similar to or the same as the description aboutthe first gate spacer 135 and the second gate spacer 235, and therefore,will not be redundantly described below.

The third gate insulating film 325 may be formed on the second fin-typepattern 310. The third gate insulating film 325 may be formed along thesidewall and a bottom surface of the third trench 335 t.

The fourth gate insulating film 425 may be formed on the second fin-typepattern 310. The fourth gate insulating film 425 may be formed along thesidewall and the bottom surface of the fourth trench 435 t.

Description of the third gate insulating film 325 and the fourth gateinsulating film 425 may be substantially similar to or the same as thatof the first gate insulating film 125, and therefore, will not beredundantly described below.

The third gate insulating film 325 and the fourth gate insulating film425 may each include, for example, at least one of silicon oxide,silicon oxynitride, silicon nitride, or a high-k dielectric materialwith a higher dielectric constant than silicon oxide.

The third gate electrode 330 may be formed on the third gate insulatingfilm 325. The third gate electrode 330 may fill the third trench 335 t.

The fourth gate electrode 430 may be formed on the fourth gateinsulating film 425. The fourth gate electrode 430 may fill the fourthtrench 435 t.

The materials and stack structures of the third gate electrode 330 andthe fourth gate electrode 430 will not be redundantly described below,as the description may be substantially similar to or the same as thatof the first gate electrode 130 and the second gate electrode 230.

The third source/drain 340 may be formed between the third gatestructure 320 and the fourth gate structure 420. The third source/drain340 may be formed adjacent to the first sidewall 320 a of the third gatestructure.

The fourth source/drain 345 may be formed adjacent to the secondsidewall 320 b of the third gate structure.

As illustrated, the third source/drain 340 and the fourth source/drain345 may include an epitaxial layer formed within the second fin-typepattern 310, although example embodiments are not limited thereto. Thethird source/drain 340 and the fourth source/drain 345 may be impurityregions formed within the second fin-type pattern 310, and may includean epitaxial layer formed along a profile of the second fin-type pattern310.

For example, the third source/drain 340 and the fourth source/drain 345may be raised source/drains.

When the semiconductor device in the second region II according to someexample embodiments is a PMOS transistor, the third source/drain 340 andthe fourth source/drain 345 may include a compressive stress material.For example, the compressive stress material may be a material such asSiGe that has a higher lattice constant compared to Si. For example, thecompressive stress material can enhance carrier mobility in the channelregion by exerting compressive stress on the second fin-type pattern310.

Alternatively, when the semiconductor device in the second region IIaccording to some example embodiments is an NMOS transistor, the thirdsource/drain 340 and the fourth source/drain 345 may include a tensilestress material. For example, when the first fin-type pattern 310 issilicon, the third source/drain 340 and the fourth source/drain 345 maybe a material such as SiC that has a smaller lattice constant thansilicon. For example, the tensile stress material can enhance carriermobility in the channel region by exerting tensile stress on the secondfin-type pattern 310.

Meanwhile, when the semiconductor device in the second region IIaccording to some example embodiments is an NMOS transistor, the thirdsource/drain 340 and the fourth source/drain 345 may include a samematerial as the second fin-type pattern 310, i.e., silicon.

The first interlayer insulating film 180 may be formed on the substrate100 of the first region I. The first interlayer insulating film 180 maycover the first fin-type pattern 110, the first source/drain 140, andthe second source/drain 145.

The first interlayer insulating film 180 may surround the first sidewall120 a of the first gate structure, the second sidewall 120 b of thefirst gate structure, and the sidewall 220 a of the second gatestructure.

The upper surface of the first interlayer insulating film 180 may be inthe same plane as the upper surface of the first gate structure 120 andthe upper surface of the second gate structure 220.

The first interlayer insulating film 180 may include a first lowerinterlayer insulating film 181 and a first upper interlayer insulatingfilm 182 stacked on the substrate 100 in a sequential order.

The first lower interlayer insulating film 181 may be formed on thefirst fin-type pattern 110. The first lower interlayer insulating film181 may surround a portion of the first sidewall 120 a of the first gatestructure, a portion of the second sidewall 120 b of the first gatestructure, and a portion of the sidewall 220 a of the second gatestructure.

For example, the first lower interlayer insulating film 181 may includesilicon oxide, silicon oxynitride, silicon nitride, flowable oxide(FOX), Tonen silazene (TOSZ), undoped silica glass (USG), borosilicaglass (BSG), phosphosilica glass (PSG), borophosphosilica glass (BPSG),plasma enhanced tetraethyl orthosilicate (PETEOS), fluoride silicateglass (FSG), carbon doped silicon oxide (CDO), xerogel, aerogel,amorphous fluorinated carbon, organo silicate glass (OSG), parylene,bis-benzocyclobutenes (BCB), SiLK, polyimide, porous polymeric material,or a combination thereof, but not limited thereto.

The first upper interlayer insulating film 182 may be formed on thefirst lower interlayer insulating film 181. The first upper interlayerinsulating film 182 may surround the first sidewall 120 a of the firstgate structure, the second sidewall 120 b of the first gate structure,and the sidewall 220 a of the second gate structure that are notsurrounded by the first lower interlayer insulating film 181.

For example, the first upper interlayer insulating film 182 may includesilicon oxide, silicon oxynitride, silicon nitride, flowable oxide(FOX), Tonen silazene (TOSZ), undoped silica glass (USG), borosilicaglass (BSG), phosphosilica glass (PSG), borophosphosilica glass (BPSG),plasma enhanced tetraethyl orthosilicate (PETEOS), fluoride silicateglass (FSG), carbon doped silicon oxide (CDO), xerogel, aerogel,amorphous fluorinated carbon, organo silicate glass (OSG), parylene,bis-benzocyclobutenes (BCB), SiLK, polyimide, porous polymeric material,or a combination thereof, but not limited thereto.

The first lower interlayer insulating film 181 is not interposed betweenthe first upper interlayer insulating film 182 and the sidewalls 120 a,120 b of the first gate structure, nor between the first upperinterlayer insulating film 182 and the sidewall 220 a of the second gatestructure.

The first lower interlayer insulating film 181 may surround the sidewallof the first gate structure 120 to a height that corresponds to thethickness t11 of the first lower interlayer insulating film 181.Further, the first upper interlayer insulating film 182 may surround thesidewall of the first gate structure 120 to a height that corresponds tothe thickness t12 of the first upper interlayer insulating film 182.

Further, the boundary surface between the first lower interlayerinsulating film 181 and the first upper interlayer insulating film 182may be a curved surface, for example. When forming the first lowerinterlayer insulating film 181 by using dry etch process and thenforming the first upper interlayer insulating film 182 on the firstlower interlayer insulating film 181, the boundary surface between thefirst lower interlayer insulating film 181 and the first upperinterlayer insulating film 182 may be a curved surface.

The second interlayer insulating film 380 may be formed on the substrate100 of the second region II. The second interlayer insulating film 380may cover the second fin-type pattern 310, the third source/drain 340,and the fourth source/drain 345.

The second interlayer insulating film 380 may surround the firstsidewall 320 a of the third gate structure, the second sidewall 320 b ofthe third gate structure, and the sidewall 420 a of the fourth gatestructure 420.

The upper surface of the second interlayer insulating film 380 may be inthe same plane as, for example, the upper surface of the third gatestructure 320 and the upper surface of the fourth gate structure 420.

The second interlayer insulating film 380 may include a second lowerinterlayer insulating film 381 and a second upper interlayer insulatingfilm 382 stacked on the substrate 100 in a sequential order.

The second lower interlayer insulating film 381 may be formed on thesecond fin-type pattern 310. The second lower interlayer insulating film381 may surround a portion of the first sidewall 320 a of the third gatestructure, a portion of the second sidewall 320 b of the third gatestructure, and a portion of the sidewall 420 a of the fourth gatestructure.

The second upper interlayer insulating film 382 may be formed on thesecond lower interlayer insulating film 381. The second upper interlayerinsulating film 382 may surround the first sidewall 320 a of the thirdgate structure, the second sidewall 320 b of the third gate structure,and the sidewall 420 a of the fourth gate structure that are notsurrounded by the second lower interlayer insulating film 381.

The second lower interlayer insulating film 381 is not interposedbetween the second upper interlayer insulating film 382 and thesidewalls 320 a, 320 b of the third gate structure, nor between thesecond upper interlayer insulating film 382 and the sidewall 420 a ofthe fourth gate structure.

The second lower interlayer insulating film 381 may surround thesidewall of the third gate structure 320 to a height that corresponds tothe thickness t21 of the second lower interlayer insulating film 381.Further, the second upper interlayer insulating film 382 may surroundthe sidewall of the third gate structure 320 to a height thatcorresponds to the thickness t22 of the second upper interlayerinsulating film 382.

Further, the boundary surface between the second lower interlayerinsulating film 381 and the second upper interlayer insulating film 382may be a curved surface, for example.

The second lower interlayer insulating film 381 may include a samematerial as the first lower interlayer insulating film 181.

Hereinbelow, it is assumed that the second upper interlayer insulatingfilm 382 includes the same material as the first upper interlayerinsulating film 182, but example embodiments are not limited thereto.

A third interlayer insulating film 190 may be formed on the firstinterlayer insulating film 180 and the second interlayer insulating film380. The third interlayer insulating film 190 may be formed on the firstregion I and the second region II of the substrate 100, for example.

For example, the third interlayer insulating film 190 may includesilicon oxide, silicon oxynitride, silicon nitride, flowable oxide(FOX), Tonen silazene (TOSZ), undoped silica glass (USG), borosilicaglass (BSG), phosphosilica glass (PSG), borophosphosilica glass (BPSG),plasma enhanced tetraethyl orthosilicate (PETEOS), fluoride silicateglass (FSG), carbon doped silicon oxide (CDO), xerogel, aerogel,amorphous fluorinated carbon, organo silicate glass (OSG), parylene,bis-benzocyclobutenes (BCB), SiLK, polyimide, porous polymeric material,or a combination thereof, but not limited thereto.

The first contact 170 may be formed between the first gate structure 120and the second gate structure 220. The first contact 170 may be formedadjacent to the first sidewall 120 a of the first gate structure.

The first contact 170 may be formed within the third interlayerinsulating film 190 and the first interlayer insulating film 180. Thefirst contact 170 may not contact the first gate structure 120 and thesecond gate structure 220. The first contact 170 may be connected withthe first source/drain 140.

The first contact 170 may have a first width W1. For example, the firstwidth W1 of the first contact 170 may be based on or correlated to therespective widths of the upper surface of the first gate structure 120and the upper surface of the second gate structure 220, but this isprovided only for convenience of explanation and example embodiments arenot limited thereto. That is, the first width W1 of the first contact170 may be based on the width of the upper surface of the thirdinterlayer insulating film 190.

Further, the first width W1 of the first contact 170 may be a width inthe first direction X1.

Referring to FIG. 5A, the boundary surface between the first contact 170and the first source/drain 140 may be a facet of an epitaxial layerincluded in the first source/drain 140.

Alternatively, referring to FIG. 5B, the boundary surface between thefirst contact 170 and the first source/drain 140 may be a curvedsurface. The boundary surface between the first contact 170 and thefirst source/drain 140 may depend on which etch process is used for thecontact hole forming process to form the first contact 170.

Although not illustrated in FIGS. 5A and 5B, a silicide layer may beadditionally formed between the first contact 170 and the firstsource/drain 140.

The second contact 370 may be formed between the third gate structure320 and the fourth gate structure 420. The second contact 370 may beformed adjacent to the first sidewall 320 a of the third gate structure.

The second contact 370 may be formed within the third interlayerinsulating film 190 and the second interlayer insulating film 380. Thesecond contact 370 may not contact the third gate structure 320 and thefourth gate structure 420. The second contact 370 may be connected withthe third source/drain 340.

The second contact 370 may have a second width W2. For example, thesecond width W2 of the second contact 370 may be based on the uppersurface of the third gate structure 320 and the upper surface of thefourth gate structure 420. Further, the second width W2 of the secondcontact 370 may be a width in the third direction X2.

The boundary surface between the second contact 370 and the thirdsource/drain 340 may be similar or the same as the one illustrated inFIGS. 5A and 5B.

The first contact 170 and the second contact 370 may include at leastone of, for example, tantalum (Ta), tantalum nitride (TaN), titanium(Ti), titanium nitride (TiN), ruthenium (Ru), cobalt (Co), nickel (Ni),nickel boride (NiB), tungsten nitride (WN), aluminum (Al), tungsten (W),copper (Cu), cobalt (Co) or doped polysilicon.

While the first contact 170 and the second contact 370 are illustratedto be a single pattern, this is only for convenience of explanation andthe example embodiments are not limited thereto. The first contact 170and the second contact 370 may each include a barrier film, and afilling film formed on the barrier film.

The first distance L1 of spacing between the first gate structure 120and the second gate structure 220 may be different from the seconddistance L2 of spacing between the third gate structure 320 and thefourth gate structure 420. Further, the first width W1 of the firstcontact 170 may be different from the second width W2 of the secondcontact 370.

For example, the first distance L1 of spacing between the first gatestructure 120 and the second gate structure 220 may be lower than thesecond distance L2 of spacing between the third gate structure 320 andthe fourth gate structure 420. Further, the first width W1 of the firstcontact 170 may be lower than the second width W2 of the second contact370.

In other words, in a semiconductor device according to some exampleembodiments, the width of the contacts formed between gate structuresmay increase as the distances between adjacent gate structures increase.

In a semiconductor device according to an example embodiment, the stresscharacteristic of the first lower interlayer insulating film 181 may bedifferent from the stress characteristic of the first upper interlayerinsulating film 182. Further, the stress characteristic of the secondlower interlayer insulating film 381 may be different from the stresscharacteristic of the second upper interlayer insulating film 382.

More specifically, for example, when the first lower interlayerinsulating film 181 has a tensile stress characteristic, the first upperinterlayer insulating film 182 may have a compressive stresscharacteristic. On the contrary, when the first lower interlayerinsulating film 181 has a compressive stress characteristic, the firstupper interlayer insulating film 182 may have a tensile stresscharacteristic.

The expression “tensile stress characteristic” as used herein refers tothe interlayer insulating film having a tension that pulls the gateelectrode or the gate spacers toward the interlayer insulating film.

More specifically, by the interlayer insulating film having the tensilestress characteristic, the gate spacers are subject to a force that actsin a direction from the gate electrode to the interlayer insulatingfilm.

On the contrary, by the interlayer insulating film having thecompressive stress characteristic, the gate spacers are subject to aforce that acts in a direction from the interlayer insulating film tothe gate electrode.

Because the first interlayer insulating film 180 may include the firstlower interlayer insulating film 181 and the first upper interlayerinsulating film 182 having different stress characteristics from eachother, the overall stress characteristic of the first interlayerinsulating film 180 may vary according to differences in thickness,volume, and so on between the first lower interlayer insulating film 181and the first upper interlayer insulating film 182.

Additionally, the first lower interlayer insulating film 181 and thefirst upper interlayer insulating film 182 may include differentmaterials from each other, or alternatively, may include the samematerial as each other.

When the first lower interlayer insulating film 181 and the first upperinterlayer insulating film 182 include a material same as each other,the conditions for forming the first lower interlayer insulating film181, including heat treatment condition, and the conditions for formingthe first upper interlayer insulating film 182, including heat treatmentcondition, may be different from each other. Accordingly, the firstlower interlayer insulating film 181 and the first upper interlayerinsulating film can have different stress characteristics from eachother.

The example in which the first lower interlayer insulating film 181 andthe first upper interlayer insulating film 182 include the same materialwill be described with reference to FIG. 13 and others.

The second lower interlayer insulating film 381 may have the samematerial and may be subject to the same post-processing as the firstlower interlayer insulating film 181. Accordingly, the second lowerinterlayer insulating film 381 may have the same stress characteristicas the first lower interlayer insulating film 181.

For convenience of explanation, it is assumed hereinbelow that the firstlower interlayer insulating film 181 and the second lower interlayerinsulating film 381 have tensile stress characteristic, and the firstupper interlayer insulating film 182 and the second upper interlayerinsulating film 382 have compressive stress characteristic.

Referring to FIG. 3, the first gate electrode 130 includes a sidewall130 s and a bottom surface 130 b. The third gate electrode 330 includesa sidewall 330 s and a bottom surface 330 b.

The sidewall 130 s of the first gate electrode may make a first angle αwith respect to the bottom surface 130 b of the first gate electrode.The sidewall 330 s of the third gate electrode may make a second angle βwith respect to the bottom surface 330 b of the third gate electrode.

In this case, the first angle α of the sidewall 130 s of the first gateelectrode with respect to the bottom surface 130 b of the first gateelectrode may be a right angle, and the second angle β of the sidewall330 s of the third gate electrode with respect to the bottom surface 330b of the third gate electrode may be a right angle.

In other words, the width of the first gate electrode 130 and the widthof the third gate electrode 330 may be constant as the distance from theupper surface of the substrate 100 increases. The width of the firstgate electrode 130 may be constant as the distance from the bottomsurface 130 b of the first gate electrode increases, and the width ofthe third gate electrode 330 may be constant as the distance from thebottom surface 330 b of the third gate electrode increases.

Additionally, the slope of the sidewall 130 s of the first gateelectrode and the slope of the sidewall 330 s of the third gateelectrode may have the same sign.

As an alternative embodiment, the point where the sidewall 130 s of thefirst gate electrode and the bottom surface 130 b of the first gateelectrode meet, and the point where the sidewall 330 s of the third gateelectrode and the bottom surface 330 b of the third gate electrode meet,may be rounded. However, even in such examples, it is apparent thatthose skilled in the art will be able to obtain the slope of thesidewall 130 s of the first gate electrode and the slope of the sidewall330 s of the third gate electrode.

Meanwhile, as an alternative to the illustration in FIG. 3, the firstangle α of the sidewall 130 s of the first gate electrode with respectto the bottom surface 130 b of the first gate electrode, and the secondangle β of the sidewall 330 s of the third gate electrode with respectto the bottom surface 330 b of the third gate electrode may both beobtuse angles or acute angles. Even in the above example, the sign ofthe slope of the sidewall 130 s of the first gate electrode, and thesign of the slope of the sidewall 330 s of the third gate electrode maystill be identical.

When both the first angle α of the sidewall 130 s of the first gateelectrode with respect to the bottom surface 130 b of the first gateelectrode, and the second angle β of the sidewall 330 s of the thirdgate electrode with respect to the bottom surface 330 b of the thirdgate electrode are obtuse angles, it is defined herein that both thesign of the slope of the sidewall 130 s of the first gate electrode andthe sign of the slope of the sidewall 330 s of the third gate electrodeare positive signs.

If the situation is opposite the example described above, then it isdefined herein that the sign of the slope of the sidewall 130 s of thefirst gate electrode and the sign of the slope of the sidewall 330 s ofthe third gate electrode are negative signs.

When both the slope of the sidewall 130 s of the first gate electrodeand the slope of the sidewall 330 s of the third gate electrode havepositive signs, the width of the first gate electrode 130 and the widthof the third gate electrode 330 may increase as the distance from theupper surface of the substrate 100 increases.

On the contrary, when both the slope of the sidewall 130 s of the firstgate electrode and the slope of the sidewall 330 s of the third gateelectrode have negative signs, the width of the first gate electrode 130and the width of the third gate electrode 330 may decrease as thedistance from the upper surface of the substrate 100 increases.

When both the slope of the sidewall 130 s of the first gate electrodeand the slope of the sidewall 330 s of the third gate electrode have thesame sign, the stress characteristic of the first interlayer insulatingfilm 180 and the stress characteristic of the second interlayerinsulating film 380 may be identical.

The first distance L1 between the first gate structure 120 and thesecond gate structure 220 may be lower than the second distance L2between the third gate structure 320 and the fourth gate structure 420.In this case, when the thickness t12 of the first upper interlayerinsulating film 182 and the thickness t22 of the second upper interlayerinsulating film 382 are substantially equal, because the second upperinterlayer insulating film 382 has a greater volume than the volume ofthe first upper interlayer insulating film 182, the compressive stressof the second upper interlayer insulating film 382 becomes greater thanthe compressive stress of the first upper interlayer insulating film182.

In such example, the compressive stress exerted by the second interlayerinsulating film 380 to the third gate structure 320 becomes greater thanthe compressive stress exerted by the first interlayer insulating film180 to the first gate structure 120. Accordingly, the stresscharacteristic of the first interlayer insulating film 180 and thestress characteristic of the second interlayer insulating film 380cannot be identical.

Accordingly, when both the slope of the sidewall 130 s of the first gateelectrode and the slope of the sidewall 330 s of the third gateelectrode have the same sign, the thickness t12 of the first upperinterlayer insulating film 182 and the thickness t22 of the second upperinterlayer insulating film 382 may be different. For example, thethickness t12 of the first upper interlayer insulating film 182 may bethicker than the thickness t22 of the second upper interlayer insulatingfilm 382.

As a result, the stress characteristic of the first interlayerinsulating film 180 and the stress characteristic of the secondinterlayer insulating film 380 may be equally obtained.

In other words, the ratio of the thickness t12 of the first upperinterlayer insulating film 182 to the thickness (t11+t12) of the firstinterlayer insulating film 180, and the ratio of the thickness t22 ofthe second upper interlayer insulating film 382 to the thickness(t21+t22) of the second interlayer insulating film 380 may be variedfrom each other, so that the stress characteristic of the firstinterlayer insulating film 180 and the stress characteristic of thesecond interlayer insulating film 380 may be equally obtained.

That is, by varying the ratio of the thickness t12 of the first upperinterlayer insulating film 182 to the thickness (t11+t12) of the firstinterlayer insulating film 180, and the ratio of the thickness t22 ofthe second upper interlayer insulating film 382 to the thickness(t21+t22) of the second interlayer insulating film 380 from each other,it is possible to equalize the sign of the slope of the sidewall 130 sof the first gate electrode and the sign of the slope of the sidewall330 s of the third gate electrode.

FIG. 6 is a view provided to explain a semiconductor device according tosome example embodiments. FIG. 7 is a view provided to explain asemiconductor device according to some example embodiments. Forconvenience of explanation, differences that are not explained abovewith reference to FIGS. 1 to 5B will be mainly explained below.

For reference, FIGS. 6 and 7 are views illustrating the first gatestructure portion and the third gate structure portion of FIG. 2 inenlargement.

Referring to FIGS. 6 and 7, in a semiconductor device according to someexample embodiments, the thickness t12 of the first upper interlayerinsulating film 182 and the thickness t22 of the second upper interlayerinsulating film 382 may be substantially equal.

That is, the ratio of the thickness t12 of the first upper interlayerinsulating film 182 to the thickness (t11+t12) of the first interlayerinsulating film 180, and the ratio of the thickness t22 of the secondupper interlayer insulating film 382 to the thickness (t21+t22) of thesecond interlayer insulating film 380 may be substantially equal.

In this case, the first distance L1 between the first gate structure 120and the second gate structure 220 may be lower than the second distanceL2 between the third gate structure 320 and the fourth gate structure420.

Accordingly, the volume of the second upper interlayer insulating film382 becomes greater than the volume of the first upper interlayerinsulating film 182.

Because the first upper interlayer insulating film 182 and the secondupper interlayer insulating film 382 may each have the compressivestress characteristic, the compressive stress of the second upperinterlayer insulating film 382 becomes greater than the compressivestress of the first upper interlayer insulating film 182.

First, in a semiconductor device according to some example embodiments,when the sidewall of the gate electrode makes a right angle with respectto the bottom surface of the gate electrode, it is defined herein thatthe sign of the slope of the gate sidewall is different from a positivesign as well as a negative sign.

As illustrated in FIG. 6, the width of the first gate electrode 130 mayincrease as the distance from the bottom surface 130 b of the first gateelectrode increases.

Because the sidewall 130 s of the first gate electrode may make anobtuse angle with respect to the bottom surface 130 b of the first gateelectrode, the sidewall 130 s of the first gate electrode may have apositive slope.

In contrast, the width of the third gate electrode 330 may be constantas the distance from the bottom surface 330 b of the third gateelectrode increases. The sidewall 330 s of the third gate electrode maymake a right angle with respect to the bottom surface 330 b of the thirdgate electrode.

Accordingly, the sign of the slope of the sidewall 130 s of the firstgate electrode and the sign of the slope of the sidewall 330 s of thethird gate electrode may be different from each other.

As illustrated in FIG. 7, the width of the first gate electrode 130 maybe constant as the distance from the bottom surface 130 b of the firstgate electrode increases. The sidewall 130 s of the first gate electrodemay make a right angle with respect to the bottom surface 130 b of thefirst gate electrode.

In contrast, the width of the third gate electrode 330 may decrease asthe distance from the bottom surface 330 b of the third gate electrodeincreases. Because the sidewall 330 s of the third gate electrode maymake an acute angle with respect to the bottom surface 330 b of thethird gate electrode, the sidewall 330 s of the third gate electrode mayhave a negative slope.

Accordingly, the sign of the slope of the sidewall 130 s of the firstgate electrode and the sign of the slope of the sidewall 330 s of thethird gate electrode may be different from each other.

If the first upper interlayer insulating film 182 and the second upperinterlayer insulating film 382 have tensile stress, the sign of theslope of the sidewall 130 s of the first gate electrode of FIG. 6 may bea negative sign, and the sign of the slope of the sidewall 330 s of thethird gate electrode of FIG. 7 may be a positive sign.

FIG. 8 is a view provided to explain a semiconductor device according tosome example embodiments. FIG. 9 illustrates the first gate structureportion and the third gate structure portion of FIG. 8 in enlargement.

For convenience of explanation, differences that are not explained abovewith reference to FIGS. 1 to 5B will be mainly explained below.

Referring to FIGS. 8 and 9, the semiconductor device according to someexample embodiments may further include a first liner 185 and a secondliner 385.

The first liner 185 may be formed between the first interlayerinsulating film 180 and the sidewalls 120 a, 120 b of the first gatestructure, between the first interlayer insulating film 180 and thesidewall 220 a of the second gate structure, and between the firstinterlayer insulating film 180 and the substrate 100.

The first liner 185 may be formed along the sidewalls 120 a, 120 b ofthe first gate structure, the upper surface of the substrate 100, andthe sidewall 220 a of the second gate structure. However, the firstliner 185 is not formed on the upper surface of the first gate structure120 and the upper surface of the second gate structure 220.

More specifically, the first liner 185 may extend along a portion of thefirst sidewall 120 a of the first gate structure, the upper surface ofthe substrate 100, and a portion of the sidewall 220 a of the secondgate structure, and may extend along a portion of the second sidewall120 b of the first gate structure.

The first liner 185 extending along the upper surface of the substrate100 may extend along the upper surface of the first source/drain 140 andthe upper surface of the second source/drain 145.

Because the first liner 185 extends along a portion of the sidewalls 120a, 120 b of the first gate structure, the height of the uppermostportion of the first liner 185 formed on the sidewalls 120 a, 120 b ofthe first gate structure may be lower than the upper surface of thefirst gate structure 120.

Further, because the first liner 185 extends along a portion of thesidewall 220 a of the second gate structure, the height of the uppermostportion of the first liner 185 formed on the sidewall 220 a of thesecond gate structure may be lower than the upper surface of the secondgate structure 220.

In other words, the height from the upper surface of the substrate 100to the uppermost portion of the first liner 185 formed on the sidewalls120 a, 120 b of the first gate structure may be lower than the heightfrom the upper surface of the substrate 100 to the upper surface of thefirst gate structure 120.

For example, the first liner 185 may include one of silicon nitride,silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon oxide, anda combination of silicon nitride, silicon oxynitride, siliconoxycarbonitride (SiOCN), and silicon oxide. Further, the first liner 185may be a single film or multiple films.

The first interlayer insulating film 180 may be formed on the firstliner 185. The first interlayer insulating film 180 may surround thesidewalls 120 a, 120 b of the first gate structure and the sidewall 220a of the second gate structure where the first liner 185 is formed.

The first lower interlayer insulating film 181 and the first upperinterlayer insulating film 182 may be deposited in a sequential order onthe first liner 185.

After dry etching to form the first liner 185 and the first lowerinterlayer insulating film 181, the first upper interlayer insulatingfilm 182 may be formed on the first lower interlayer insulating film181. Accordingly, the first liner 185 may not extend between the firstupper interlayer insulating film 182 and the sidewalls 120 a, 120 b ofthe first gate structure, but not limited thereto.

Additionally, the first upper interlayer insulating film 182 may coverthe upper surface of the first liner 185 that is formed on the sidewalls120 a, 120 b of the first gate structure and the sidewall 220 a of thesecond gate structure.

The thickness t12 of the first upper interlayer insulating film 182formed on the first lower interlayer insulating film 181 may correspondto a distance from the upper surface of the first gate structure 120 tothe uppermost portion of the first liner 185.

The first contact 170 may be passed through the first liner 185 formedon the upper surface of the first source/drain 140 and connected withthe first source/drain 140.

The second liner 385 may be formed between the second interlayerinsulating film 380 and the sidewalls 320 a, 320 b of the third gatestructure, between the second interlayer insulating film 380 and thesidewall 420 a of the fourth gate structure, and between the secondinterlayer insulating film 380 and the substrate 100.

The second liner 385 may be formed along the sidewalls 320 a, 320 b ofthe third gate structure, the upper surface of the substrate 100, andthe sidewall 420 a of the fourth gate structure. However, the secondliner 385 is not formed on the upper surface of the third gate structure320 and the upper surface of the fourth gate structure 420.

More specifically, the second liner 385 may extend along a portion ofthe first sidewall 320 a of the third gate structure, the upper surfaceof the substrate 100, and a portion of the sidewall 420 a of the fourthgate structure, and may extend along a portion of the second sidewall320 b of the third gate structure.

The second liner 385 extending along the upper surface of the substrate100 may extend along the upper surface of the third source/drain 340 andthe upper surface of the fourth source/drain 345.

Since the second liner 385 extends along a portion of the sidewalls 320a, 320 b of the third gate structure, the height of the uppermostportion of the second liner 385 formed on the sidewalls 320 a, 320 b ofthe third gate structure may be lower than the upper surface of thethird gate structure 320.

Further, because the second liner 385 extends along a portion of thesidewall 420 a of the fourth gate structure, the height of the uppermostportion of the second liner 385 formed on the sidewall 420 a of thefourth gate structure may be lower than the upper surface of the fourthgate structure 420.

In other words, the height from the upper surface of the substrate 100to the uppermost portion of the second liner 385 formed on the sidewalls320 a, 320 b of the third gate structure may be lower than the heightfrom the upper surface of the substrate 100 to the upper surface of thethird gate structure 320.

The second interlayer insulating film 380 may be formed on the secondliner 385. The second interlayer insulating film 380 may surround thesidewalls 320 a, 320 b of the third gate structure and the sidewall 420a of the fourth gate structure where the second liner 385 is formed.

The second lower interlayer insulating film 381 and the second upperinterlayer insulating film 382 may be deposited in a sequential order onthe second liner 385.

After dry etching to form the second liner 385 and the second lowerinterlayer insulating film 381, the second upper interlayer insulatingfilm 382 may be formed on the second lower interlayer insulating film381.

The second upper interlayer insulating film 382 may cover the uppersurface of the second liner 385 that is formed on the sidewalls 320 a,320 b of the third gate structure and the sidewall 420 a of the fourthgate structure.

The thickness t22 of the second upper interlayer insulating film 382formed on the second lower interlayer insulating film 381 may correspondto a distance from the upper surface of the third gate structure 320 tothe uppermost portion of the second liner 385.

The second contact 370 may be passed through the second liner 385 formedon the upper surface of the third source/drain 340 and connected withthe third source/drain 340.

As illustrated in FIG. 9, the slope of the sidewall 130 s of the firstgate electrode and the slope of the sidewall 330 s of the third gateelectrode may have the same sign. For example, the sidewall 130 s of thefirst gate electrode and the sidewall 330 s of the third gate electrodemay be orthogonal to the upper surface of the substrate 100.

The first distance L1 between the first gate structure 120 and thesecond gate structure 220 may be lower than the second distance L2between the third gate structure 320 and the fourth gate structure 420.

In order to adjust the magnitude of the compressive stress applied bythe first upper interlayer insulating film 182 to the first gatestructure 120 and the magnitude of the compressive stress applied by thesecond upper interlayer insulating film 382 to the third gate structure320, the distance t12 from the upper surface of the first gate structure120 to the uppermost portion of the first liner 185 may be greater thanthe distance t22 from the upper surface of the third gate structure 320to the uppermost portion of the second liner 385.

FIG. 10 is a view provided to explain a semiconductor device accordingto some example embodiments. FIG. 11 is a view provided to explain asemiconductor device according to some example embodiments. Forconvenience of explanation, differences that are not explained abovewith reference to FIGS. 8 and 9 will be mainly explained below.

For reference, FIGS. 10 and 11 are views illustrating the first gatestructure portion and the third gate structure portion of FIG. 8 inenlargement.

Referring to FIGS. 10 and 11, in a semiconductor device according tosome example embodiments, the thickness t12 of the first upperinterlayer insulating film 182 and the thickness t22 of the second upperinterlayer insulating film 382 may be substantially equal.

The distance t12 from the upper surface of the first gate structure 120to the uppermost portion of the first liner 185 and the distance t12from the upper surface of the third gate structure 320 to the uppermostportion of the second liner 385 may be substantially equal.

Because the first distance L1 between the first gate structure 120 andthe second gate structure 220 is lower than the second distance L2between the third gate structure 320 and the fourth gate structure 420,the volume of the second upper interlayer insulating film 382 becomesgreater than the volume of the first upper interlayer insulating film182.

Because the compressive stress of the second upper interlayer insulatingfilm 382 becomes greater than the compressive stress of the first upperinterlayer insulating film 182, the sign of the slope of the sidewall130 s of the first gate electrode and the sign of the slope of thesidewall 330 s of the third gate electrode may be different from eachother.

As illustrated in FIG. 10, the sidewall 130 s of the first gateelectrode may make a positive slope and the sidewall 330 s of the thirdgate electrode may make a right angle.

As illustrated in FIG. 11, the sidewall 130 s of the first gateelectrode may have a slope at a right angle, and the sidewall 330 s ofthe third gate electrode may have a negative slope.

FIG. 12 is a view provided to explain a semiconductor device accordingto some example embodiments. FIG. 13 is a view provided to explain asemiconductor device according to some example embodiments. FIG. 14 is aview provided to explain a semiconductor device according to someexample embodiments. For convenience of explanation, differences thatare not explained above with reference to FIGS. 8 and 9 will be mainlyexplained below.

Referring to FIG. 12, in a semiconductor device according to someexample embodiments, the first liner 185 may be formed along theentirety of the sidewalls 120 a, 120 b of the first gate structure andthe sidewall 220 a of the second gate structure.

Further, the second liner 385 may be formed along the entirety of thesidewalls 320 a, 320 b of the third gate structure and the sidewall 420a of the fourth gate structure.

In other words, the height from the upper surface of the substrate 100to the uppermost portion of the first liner 185 may be substantiallyequal to the height from the upper surface of the substrate 100 to theupper surface of the first gate structure 120.

Further, the height from the upper surface of the substrate 100 to theuppermost portion of the second liner 385 may be substantially equal tothe height from the upper surface of the substrate 100 to the uppersurface of the third gate structure 320.

While FIG. 12 illustrates boundary surfaces between the first lowerinterlayer insulating film 181 and the first upper interlayer insulatingfilm 182, and between the second lower interlayer insulating film 381and the second upper interlayer insulating film 382 as the planes,example embodiments are not limited thereto.

Referring to FIG. 13, in a semiconductor device according to someexample embodiments, the first interlayer insulating film 180 formed onthe first liner 185 may be a single film. Further, the second interlayerinsulating film 380 formed on the second liner 385 may be a single film.

By the statement that the first interlayer insulating film 180 and thesecond interlayer insulating film 380 are ‘single film’, it simply meansthat each, or at least one, of the first interlayer insulating film 180and the second interlayer insulating film 380 is formed of or include asingle material.

Accordingly, while each, or at least one, of the first interlayerinsulating film 180 and the second interlayer insulating film 380 may beformed of or include a single material, each, or at least one, of thefirst interlayer insulating film 180 and the second interlayerinsulating film 380 may include a material of different stresscharacteristic from the other. This is because, as described above, eventhe same material can have different stress characteristic underdifferent forming conditions including heat treatment condition, and soon.

Even when the first interlayer insulating film 180 is a single film, theheight from the upper surface of the substrate 100 to the uppermostportion of the first liner 185 formed on the sidewalls 120 a, 120 b ofthe first gate structure may be lower than the height from the uppersurface of the substrate 100 to the upper surface of the first gatestructure 120.

Further, even when the second interlayer insulating film 380 is a singlefilm, the height from the upper surface of the substrate 100 to theuppermost portion of the second liner 385 formed on the sidewalls 320 a,320 b of the third gate structure may be lower than the height from theupper surface of the substrate 100 to the upper surface of the thirdgate structure 320.

Further, the height from the upper surface of the substrate 100 to theuppermost portion of the first liner 185 formed on the sidewalls 120 a,120 b of the first gate structure may be different from the height fromthe upper surface of the substrate 100 to the uppermost portion of thesecond liner 385 formed on the sidewalls 320 a, 320 b of the third gatestructure.

Referring to FIG. 14, in a semiconductor device according to someexample embodiments, the first interlayer insulating film 180 formed onthe first liner 185 may be a single film. Further, the first liner 185may be formed along the entirety of the sidewalls 120 a, 120 b of thefirst gate structure and the sidewall 220 a of the second gatestructure.

The height from the upper surface of the substrate 100 to the uppermostportion of the first liner 185 may be substantially equal to the heightfrom the upper surface of the substrate 100 to the upper surface of thefirst gate structure 120.

For example, the first interlayer insulating film 180 may include a samematerial as the second lower interlayer insulating film 381 and have thesame stress characteristic.

In contrast, the second interlayer insulating film 380 on the secondliner 385 may include the second lower interlayer insulating film 381and the second upper interlayer insulating film 382.

The height from the upper surface of the substrate 100 to the uppermostportion of the second liner 385 formed on the sidewalls 320 a, 320 b ofthe third gate structure may be lower than the height from the uppersurface of the substrate 100 to the upper surface of the third gatestructure 320.

FIG. 15A is a view provided to explain a semiconductor device accordingto some example embodiments. FIG. 15B is an enlarged, example view ofthe squared area P of FIG. 15A. For convenience of explanation,differences that are not explained above with reference to FIGS. 1 to 5Bwill be mainly explained below.

For reference, FIG. 15B may be a view exemplifying an example in whichthe gate spacer is a multi-film. That is, when the gate spacer is asingle film, it may be in an I-shape as illustrated in FIG. 15A.

Referring to FIGS. 15A and 15B, in a semiconductor device according tosome example embodiments, the first contact 170 may contact the firstgate structure 120 and the second gate structure 220.

The first contact 170 may be aligned by the first sidewall 120 a of thefirst gate structure and the sidewall 220 a of the second gatestructure. The first contact 170 may be connected with the firstsource/drain 140.

However, a contact that contacts the second sidewall 120 b of the firstgate structure and is connected with the second source/drain 145 may notbe formed.

The second contact 370 may contact the third gate structure 320 and thefourth gate structure 420.

The second contact 370 may be aligned by the first sidewall 320 a of thethird gate structure and the sidewall 420 a of the fourth gatestructure. The second contact 370 may be connected with the thirdsource/drain 340.

However, a contact that contacts the second sidewall 320 b of the thirdgate structure and is connected with the fourth source/drain 345 may notbe formed.

For example, the width of the first contact 170 and the width of thesecond contact 370 may increase as the distance from the upper surfaceof the substrate 100 increases.

As illustrated in FIG. 15B, the first gate spacer 135 may be a triplefilm that includes a first portion 135 a, a second portion 135 b and athird portion 135 c, although example embodiments are not limitedthereto.

For example, when the first gate spacer 135 is formed as a triple layer,at least one of the first to third portions 135 a, 135 b, 135 c of thefirst gate spacer 135 may have an L-shape.

As illustrated in FIG. 15B, the first portion 135 a of the first gatespacer and the second portion 135 b of the first gate spacer may eachhave an L-shape. However, this is provided only for convenience ofexplanation, and example embodiments are not limited thereto.

That is, it is of course possible that one of the first portion 135 a ofthe first gate spacer and the second portion 135 b of the first gatespacer may have an L-shape.

Further, at least one of the first portion 135 a of the first gatespacer, the second portion 135 b of the first gate spacer, or the thirdportion 135 c of the first gate spacer may include a low-k material suchas silicon oxycarbon nitride (SiOCN) layer.

FIG. 16 is a view provided to explain a semiconductor device accordingto some example embodiments. For convenience of explanation, differencesthat are not explained above with reference to FIG. 15A will be mainlyexplained below.

Referring to FIG. 16, in a semiconductor device according to someexample embodiments, the first gate structure 120 may include a firstcapping pattern 150, and the second gate structure 220 may include asecond capping pattern 250.

Further, the third gate structure 320 may include a third cappingpattern 350, and the fourth gate structure 420 may include a fourthcapping pattern 450.

For example, the first gate electrode 130 may fill a portion of thefirst trench 135 t. The first capping pattern 150 may be formed on thefirst gate electrode 130. The first capping pattern 150 may fill rest ofthe first trench 135 t left after the first gate electrode 130 isformed.

While FIG. 16 illustrates that the first gate insulating film 125 is notformed between the first gate spacer 135 and the first capping pattern150, this is provided only for convenience of explanation and exampleembodiments are not limited thereto.

The upper surface of the first capping pattern 150 may be the uppersurface of the first gate structure 120. The upper surface of the firstcapping pattern 150 may be in the same plane as the upper surface of thefirst interlayer insulating film 180.

The first capping pattern 150 may include, for example, a materialhaving etch selectivity with respect to the first interlayer insulatingfilm 180.

The first capping pattern 150 may include at least one of, for example,silicon nitride (SiN), silicon oxynitride (SiON), silicon dioxide(SiO₂), silicon carbon nitride (SiCN), silicon oxycarbon nitride(SiOCN), and a combination of silicon nitride (SiN), silicon oxynitride(SiON), silicon dioxide (SiO₂), silicon carbon nitride (SiCN) andsilicon oxycarbon nitride (SiOCN).

Description about the second capping pattern 250, the third cappingpattern 350, and the fourth capping pattern 450 will be omitted, as thisis similar to or the same as that of the first capping pattern 150.

FIG. 17 is a view provided to explain a semiconductor device accordingto some example embodiments. FIG. 18 illustrates the first gatestructure portion and the third gate structure portion of FIG. 17 inenlargement. For convenience of explanation, differences that are notexplained above with reference to FIGS. 8 and 9 will be mainly explainedbelow.

Referring to FIGS. 17 and 18, the first contact 170 may contact thefirst gate structure 120 and the second gate structure 220.

The first contact 170 may be aligned by the first sidewall 120 a of thefirst gate structure and the sidewall 220 a of the second gatestructure. The first contact 170 may be connected with the firstsource/drain 140.

However, a contact that contacts the second sidewall 120 b of the firstgate structure and is connected with the second source/drain 145 may notbe formed.

Further, the first liner 185 may be positioned between the first contact170 and the first sidewall 120 a of the first gate structure.

The first liner 185 extending along the upper surface of the firstsource/drain 140 may be removed during process of forming the firstcontact 170, but the first liner 185 on a portion of the first sidewall120 a of the first gate structure may not be removed but remain.

During process of forming the first contact 170, a portion of the firstliner 185 on the first sidewall 120 a of the first gate structure may beremoved.

However, because a contact that contacts the second sidewall 120 b ofthe first gate structure is not formed, the first liner 185 on theportion of the second sidewall 120 b of the first gate structure may notbe removed.

Accordingly, the height h11 of the first liner 185 on the first sidewall120 a of the first gate structure may be different from the height h12of the first liner 185 on the second sidewall 120 b of the first gatestructure.

For example, the height h12 of the first liner 185 on the secondsidewall 120 b of the first gate structure may be greater than theheight h11 of the first liner 185 on the first sidewall 120 a of thefirst gate structure by a first height h13.

The second contact 370 may contact the third gate structure 320 and thefourth gate structure 420.

The second contact 370 may be aligned by the first sidewall 320 a of thethird gate structure and the sidewall 420 a of the fourth gatestructure. The second contact 370 may be connected with the thirdsource/drain 340.

However, a contact that contacts the second sidewall 320 b of the thirdgate structure and is connected with the fourth source/drain 345 may notbe formed.

The second liner 385 may be positioned between the second contact 370and the first sidewall 320 a of the third gate structure.

The second liner 385 extending along the upper surface of the thirdsource/drain 340 may be removed during process of forming the secondcontact 370, but the second liner 385 on a portion of the first sidewall320 a of the third gate structure may not be removed but remain.

During process of forming the second contact 370, a portion of thesecond liner 385 on the first sidewall 320 a of the third gate structuremay be removed.

However, because a contact that contacts the second sidewall 320 b ofthe third gate structure is not formed, the second liner 385 on theportion of the second sidewall 320 b of the third gate structure may notbe removed.

Accordingly, the height h21 of the second liner 385 on the firstsidewall 320 a of the third gate structure may be different from theheight h22 of the second liner 385 on the second sidewall 320 b of thethird gate structure.

For example, the height h22 of the second liner 385 on the secondsidewall 320 b of the third gate structure may be greater than theheight h21 of the second liner 385 on the first sidewall 320 a of thethird gate structure by a second height h23.

For example, the width of the first contact 170 and the width of thesecond contact 370 may increase as the distance from the upper surfaceof the substrate 100 increases.

FIG. 19 is a view provided to explain a semiconductor device accordingto some example embodiments. FIG. 20 is a view provided to explain asemiconductor device according to some example embodiments. FIG. 21 is aview provided to explain a semiconductor device according to someexample embodiments.

For convenience of explanation, differences that are not explained abovewith reference to FIGS. 17 and 18 will be mainly explained below.

For reference, FIGS. 19 to 21 are views illustrating the first gatestructure portion and the third gate structure portion of FIG. 17 inenlargement.

Referring to FIG. 19, in a semiconductor device according to someexample embodiments, the sidewall 130 s of the first gate electrode mayhave a positive slope, and the sidewall 330 s of the third gateelectrode may have a slope at a right angle.

The width of the first gate electrode 130 may increase as the distancefrom the upper surface of the first fin-type pattern 110 increases.Further, the width of the third gate electrode 330 may be substantiallyconstant as the distance from the upper surface of the second fin-typepattern 310 increases.

When the sidewall 130 s of the first gate electrode has a positiveslope, the sidewall of the first contact 170 contacting the firstsidewall 120 a of the first gate structure may have a negative slope.

That is, the width of the first contact 170 decreases from W11 to W12,along a direction from the upper surface of the first source/drain 140toward the uppermost portion of the first liner 185 on the firstsidewall 120 a of the first gate structure. After that, the width of thefirst contact 170 may increase along the direction from the uppermostportion of the first liner 185 toward the upper surface of the firstgate structure 120.

In other words, the width of the first contact 170 may decrease and thenincrease, as the distance from the upper surface of the first fin-typepattern 110, i.e., as the distance from the upper surface of thesubstrate 100 increases.

In contrast, the width of the second contact 370 may increase, as thedistance from the upper surface of the second fin-type pattern 310,i.e., as the distance from the upper surface of the substrate 100increases.

Referring to FIG. 20, in a semiconductor device according to someexample embodiments, the sidewall 130 s of the first gate electrode mayhave a slope at a right angle, and the sidewall 330 s of the third gateelectrode may have a negative slope.

The width of the third gate electrode 330 may decrease as the distancefrom the upper surface of the second fin-type pattern 310 increases.Further, the width of the first gate electrode 130 may be substantiallyconstant as the distance from the upper surface of the first fin-typepattern 110 increases.

The width of the first contact 170 may increase as the distance from theupper surface of the first fin-type pattern 110, i.e., as the distancefrom the upper surface of the substrate 100 increases. The width of thesecond contact 370 may increase as the distance from the upper surfaceof the second fin-type pattern 310, i.e., as the distance from the uppersurface of the substrate 100 increases.

Referring to FIG. 21, in a semiconductor device according to someexample embodiments, the first interlayer insulating film 180surrounding the second sidewall 120 b of the first gate structure, andthe second interlayer insulating film 380 surrounding the secondsidewall 320 b of the third gate structure may be single films.

While the first interlayer insulating film 180 and the second interlayerinsulating film 380 may each be formed of or include a single material,each may include a material of different stress characteristic from theother.

FIG. 22 is layout diagrams provided to explain a semiconductor deviceaccording to some example embodiments. FIG. 23 is cross sectional viewstaken on lines A-A, B-B, and E-E of FIG. 22.

For convenience of explanation, differences that are not explained abovewith reference to FIGS. 1 to 5B will be mainly explained below.

Referring to FIGS. 22 and 23, a semiconductor device according to someexample embodiments may additionally include a third fin-type pattern510, a fifth gate structure 520, a sixth gate structure 620, and a thirdcontact 570.

The substrate 100 may include a first region I, a second region II, anda third region III. The third region III, and the first region I and/orthe second region II may be the regions that are spaced apart from oneanother, or connected with one another.

In the third region III, the third fin-type pattern 510, the fifth gatestructure 520, the sixth gate structure 620, and the third contact 570may be formed.

The third fin-type pattern 510 may extend longitudinally on thesubstrate 100 in a fifth direction X3. The third fin-type pattern 510may protrude from the substrate 100.

The fifth gate structure 520 may extend in a sixth direction Y3. Thefifth gate structure 520 may be formed to intersect the third fin-typepattern 510.

The sixth gate structure 620 may extend in the sixth direction Y3. Thesixth gate structure 620 may be formed to intersect the third fin-typepattern 510. The sixth gate structure 620 may be spaced apart from thefifth gate structure 520 by a third distance L3.

The distance L3 of spacing between the fifth gate structure 520 and thesixth gate structure 620 may be greater than the distance L of spacingbetween the first gate structure 120 and the second gate structure 220,and the distance L2 of spacing between the third gate structure 320 andthe fourth gate structure 420.

Further, the fifth gate structure 520 may include a fifth gateelectrode, a fifth gate insulating film, and a fifth gate spacer, andthe sixth gate structure 620 may include a sixth gate electrode, a sixthgate insulating film, and a sixth gate spacer.

Description of the structures of the fifth gate structure 520 and thesixth gate structure 620 may be substantially identical to that of thefirst gate structure 120, and therefore, will not be redundantlydescribed below.

The fifth source/drain 540 may be formed between the fifth gatestructure 520 and the sixth gate structure 620. As illustrated, thefifth source/drain 540 may include an epitaxial layer formed within thethird fin-type pattern 510, although example embodiments are not limitedthereto.

Depending on whether the semiconductor device formed in the third regionIII is a PMOS or an NMOS, the fifth source/drain 540 may include atensile stress material, or a compressive stress material, or a materialsame as the third fin-type pattern 510.

The fourth interlayer insulating film 580 may be formed on the substrate100 of the third region III. The fourth interlayer insulating film 580may cover the third fin-type pattern 510, and the fifth source/drain540.

The upper surface of the fourth interlayer insulating film 580 may be inthe same plane as, for example, the upper surface of the fifth gatestructure 520 and the upper surface of the sixth gate structure 620.

Description of the fourth interlayer insulating film 580 may besubstantially identical to that of the first interlayer insulating film180, and will not be redundantly described below.

The third contact 570 may be formed between the fifth gate structure 520and the sixth gate structure 620.

The third contact 570 may be formed within the third interlayerinsulating film 190 and the fourth interlayer insulating film 580. Thethird contact 570 may not contact the fifth gate structure 520 and thesixth gate structure 620. The third contact 570 may be connected withthe fifth source/drain 540.

The third contact 570 may have a third width W3. For example, the thirdwidth W3 of the third contact 570 may be based on the upper surface ofthe fifth gate structure 520 and the upper surface of the sixth gatestructure 620, but this is provided only for convenience of explanationand example embodiments are not limited thereto. That is, the thirdwidth W3 of the third contact 570 may be based on the upper surface ofthe third interlayer insulating film 590.

Further, the third width W3 of the third contact 570 may be a width inthe fifth direction X3.

As illustrated in FIG. 23, the third width W3 of the third contact 570may be greater than the first width W1 of the first contact 170 and thesecond width W2 of the second contact 370.

That is, the width of the contacts formed between the gate structuresmay increase as the distance between the gate structures increases.

FIG. 24 is a view provided to explain a semiconductor device accordingto some example embodiments. For convenience of explanation, differencesthat are not explained above with reference to FIGS. 22 and 23 will bemainly explained below.

Referring to FIG. 24, in a semiconductor device according to someexample embodiments, the third width W3 of the third contact 570 may begreater than the first width W1 of the first contact 170, butsubstantially equal to the second width W2 of the second contact 370.

The distance L3 of spacing between the fifth gate structure 520 and thesixth gate structure 620 may be greater than the distance L2 of spacingbetween the third gate structure 320 and the fourth gate structure 420,but the third width W3 of the third contact 570 may be substantiallyequal to the second width W2 of the second contact 370.

FIG. 25 is a view provided to explain a semiconductor device accordingto some example embodiments. For convenience of explanation, differencesthat are not explained above with reference to FIG. 24 will be mainlyexplained below.

Referring to FIG. 25, in a semiconductor device according to someexample embodiments, the first contact 170 may contact the first gatestructure 120 and the second gate structure 220, and the second contact370 may contact the third gate structure 320 and the fourth gatestructure 420.

However, while the distance L3 of spacing between the fifth gatestructure 520 and the sixth gate structure 620 may be greater than thedistance L2 of spacing between the third gate structure 320 and thefourth gate structure 420, because the third width W3 of the thirdcontact 570 is substantially equal to the second width W2 of the secondcontact 370, the third contact 570 does not contact at least one of thefifth gate structure 520 and the sixth gate structure 620.

FIG. 26 is a layout diagram provided to explain a semiconductor deviceaccording to some example embodiments. FIG. 27 is a cross sectional viewtaken on line D-D of FIG. 26.

For convenience of explanation, differences that are not explained abovewith reference to FIGS. 1 to 5B will be mainly explained below.

Referring to FIGS. 26 and 27, a semiconductor device according to someexample embodiments may additionally include a fourth fin-type pattern210 formed in the first region I.

The fourth fin-type pattern 210 may extend in the first direction X andabreast of the first fin-type pattern 110.

The first gate structure 120 and the second gate structure 220 may eachintersect the first fin-type pattern 110 and the fourth fin-type pattern210.

The first source/drain 140 may be formed on the first fin-type pattern110. The sixth source/drain 240 may be formed on the fourth fin-typepattern 210.

The first source/drain 140 and the sixth source/drain 240 formed on thefirst fin-type pattern 110 and the adjacent fourth fin-type pattern 210may contact each other.

The first contact 170 may be connected with the first source/drain 140and the sixth source/drain 240 that contact each other.

The first contact 170 may include, for example, a shared contact.

FIG. 28 is a block diagram of a SoC system comprising a semiconductordevice according to example embodiments.

Referring to FIG. 28, a SoC system 1000 includes an applicationprocessor 1001 and a dynamic random-access memory (DRAM) 1060.

The application processor 1001 may include a central processing unit(CPU) 1010, a multimedia system 1020, a bus 1030, a memory system 1040and a peripheral circuit 1050.

The CPU 1010 may perform arithmetic operation necessary for driving ofthe SoC system 1000. In some example embodiments, the CPU 1010 may beconfigured on a multi-core environment which includes a plurality ofcores.

The multimedia system 1020 may be used for performing a variety ofmultimedia functions on the SoC system 1000. Such multimedia system 1020may include a three-dimensional (3D) engine module, a video codec, adisplay system, a camera system, a post-processor, and so on.

The bus 1030 may be used for exchanging data communication among the CPU1010, the multimedia system 1020, the memory system 1040 and theperipheral circuit 1050. In some example embodiments, the bus 1030 mayhave a multi-layer structure. Specifically, an example of the bus 1030may be a multi-layer advanced high-performance bus (AHB), or amulti-layer advanced eXtensible interface (AXI), although exampleembodiments are not limited herein.

The memory system 1040 may provide environments necessary for theapplication processor 1001 to connect to an external memory (e.g., DRAM1060) and perform high-speed operation. In some example embodiments, thememory system 1040 may include a separate controller (e.g., DRAMcontroller) to control an external memory (e.g., DRAM 1060).

The peripheral circuit 1050 may provide environments necessary for theSoC system 1000 to have a seamless connection to an external device(e.g., main board). Accordingly, the peripheral circuit 1050 may includea variety of interfaces to allow compatible operation with the externaldevice connected to the SoC system 1000.

The DRAM 1060 may function as an operation memory necessary for theoperation of the application processor 1001. In some exampleembodiments, the DRAM 1060 may be arranged externally to the applicationprocessor 1001, as illustrated. Specifically, the DRAM 1060 may bepackaged into a package on package (PoP) type with the applicationprocessor 1001.

At least one of the above-mentioned components of the SoC system 1000may include at least one of the semiconductor devices according to theexample embodiments explained above.

In concluding the detailed description, those skilled in the art willappreciate that many variations and modifications can be made to theexample embodiments without substantially departing from the principlesof the inventive concepts. Therefore, the disclosed example embodimentsare used in a generic and descriptive sense only and not for purposes oflimitation.

What is claimed is:
 1. A semiconductor device, comprising: a substrateincluding a first region and a second region; a first gate structure anda second gate structure on the substrate of the first region, the firstgate structure and the second gate structure being spaced apart by afirst distance; a third gate structure and a fourth gate structure onthe substrate of the second region, the third gate structure and thefourth gate structure being spaced apart by a second distance differentfrom the first distance; a first interlayer insulating film on thesubstrate of the first region, the first interlayer insulating filmincluding a first lower interlayer insulating film and a first upperinterlayer insulating film on the first lower interlayer insulatingfilm, the first lower interlayer insulating film surrounding a portionof a sidewall of the first gate structure and a portion of a sidewall ofthe second gate structure, an upper surface of the first lowerinterlayer insulating film being lower than an upper surface of thefirst gate structure; a second interlayer insulating film on thesubstrate of the second region, the second interlayer insulating filmincluding a second lower interlayer insulating film and a second upperinterlayer insulating film on the second lower interlayer insulatingfilm, the second lower interlayer insulating film surrounding a portionof a sidewall of the third gate structure and a portion of a sidewall ofthe fourth gate structure, an upper surface of the second lowerinterlayer insulating film being lower than an upper surface of thethird gate structure; a first contact between the first gate structureand the second gate structure, the first contact being within the firstinterlayer insulating film and having a first width; a second contactbetween the third gate structure and the fourth gate structure, thesecond contact being within the second interlayer insulating film andhaving a second width different from the first width; and a firstfin-type pattern and a second fin-type pattern protruding from thesubstrate, the first gate structure and the second gate structureintersecting the first fin-type pattern, the third gate structure andthe fourth gate structure intersecting the second fin-type pattern,wherein the first width being correlated to a width of the upper surfaceof the first gate structure, and the second width being correlated to awidth of the upper surface of the third gate structure, and wherein thefirst gate structure includes a gate spacer defining a trench, a gateinsulating film along a sidewall and a bottom surface of the trench, anda gate electrode on the gate insulating film and filling the trench. 2.The semiconductor device of claim 1, wherein the first lower interlayerinsulating film is not interposed between the first upper interlayerinsulating film and the sidewall of the first gate structure, and thefirst lower interlayer insulating film is not interposed between thefirst upper interlayer insulating film and the sidewall of the secondgate structure.
 3. The semiconductor device of claim 1, wherein thefirst distance is greater than the second distance, and the first widthis greater than the second width.
 4. The semiconductor device of claim1, further comprising a first liner between the first lower interlayerinsulating film and the sidewall of the first gate structure, the firstliner being between the first lower interlayer insulating film and anupper surface of the substrate.
 5. The semiconductor device of claim 4,wherein a height of an uppermost portion of the first liner on thesidewall of the first gate structure is lower than a height of the uppersurface of the first gate structure.
 6. The semiconductor device ofclaim 4, further comprising a second liner between the second lowerinterlayer insulating film and the sidewall of the third gate structure,the second liner being between the second lower interlayer insulatingfilm and the upper surface of the substrate.
 7. The semiconductor deviceof claim 1, wherein the first contact contacts the first gate structureand the second gate structure, and the second contact contacts the thirdgate structure and the fourth gate structure.